Rough Interfaces in THz Quantum Cascade Lasers

Tillmann Kubis, Purdue University - Main Campus
Gerhard Klimeck, Purdue University - Main Campus

Date of this Version



doi: 10.1109/IWCE.2010.5677986


International Workshop for Computational Electronics, Publication YEar: 2010, Pages 1-4, Pisa, Italy


The impact of interface roughness scattering on the device performance of state-of-the-art THz quantum cascade lasers is theoretically analyzed using the non-equilibrium Green's function formalism. It is shown that for a particular direct transition QCL design style rough interfaces hardly change the electronic energy spectrum, but dramatically reduce the occupation inversion and the opltical gain. A spatial separation leading to a diagonal transition laser, leads in contrast to a limited sensitivity to interface roughness. Diagonal transition QCL designs result in a better device performance and an improved reliability with respect to interface roughness induced by growth quality variations.


Nanoscience and Nanotechnology