Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO/OMEN

Gerhard Klimeck, Purdue University - Main Campus
Mathieu Luisier, Purdue University - Main Campus

Date of this Version

2010

Citation

IEEE Computing in Science and Engineering (CISE), Vol. 12, 28-35, 2010.

Comments

This article has been accepted for publication in Computing in Science and Engineering but has not yet been fully edited. Some content may change prior to final publication.

Abstract

The Nanoelectronic Modeling (NEMO) Toolset has been continually developed over the past 15 years to provide insight into nano-scale semiconductor devices that are dominated by quantum mechanical effects. The ability to represent realistically large devices in an atomistic basis has been the key element to match experimental data and to guide experiments. Now these insights flow into the creation of a new simulation engine called OMEN. Critical modeling requirements, scaling on parallel computers, and sample scientific results are discussed.

Discipline(s)

Nanoscience and Nanotechnology

 

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