Atomistic Approach to Alloy Scattering in Si(1-x)Ge(x)
Date of this Version
4-26-2011Citation
Applied Physics Letters 98, 173503 (2011)
Abstract
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into complementary metal-oxide semiconductor technology. However, alloy scattering has till now been treated in an empirical fashion with a fitting parameter. We present a theoretical model within the atomistic tight-binding representation for treating alloy scattering in SiGe. This approach puts the scattering model on a solid atomistic footing with physical insights. The approach is shown to inherently capture the bulk alloy scattering potential parameters for both n-type and p-type
carriers and matches experimental mobility data.
Discipline(s)
Nanoscience and Nanotechnology
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