Stark Tuning of the Charge States of a Two-Donor Molecule in Silicon

Rajib Rahman, NCN, Purdue University
Seung H. Park, NCN, Purdue University
Gerhard Klimeck, NCN, Purdue University
Lloyd C. L. Hollenberg, University of Melbourne, Australia

Abstract

Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor sepa- rations and operating gate voltages. The effects of surface (S) and barrier (B) gates are analyzed in various voltage regimes with respect to the quantum confined states of the whole device. Effects such as interface ionization, saturation of the tunnel coupling, sensitivity to donor and gate place- ment are also studied. It is found that realistic gate control is smooth for any donor separation, although at certain donor orientations the S and B gates may get switched in functionality. This paper outlines and analyzes the various issues that are of importance in practical control of such donor molecular systems.

Discipline(s)

Nanoscience and Nanotechnology