Tuning Lattice Thermal Conductance by Porosity Control in Ultrascaled Si and Ge Nanowires

Abhijeet Paul, NCN, Purdue University
Gerhard Klimeck, NCN, Purdue University

Abstract

Porous nanowires 􏰎NWs􏰍 with tunable thermal conductance are examined as a candidate for thermoelectric devices with high efficiency. Thermal conductance 􏰎􏱆l􏰍 of porous NWs is calculated using the phonon dispersion obtained from a modified valence force field model. Porosity in the NWs break the crystal symmetry leading to the reduction in ballistic 􏱆l. 􏰐100􏰑 Si and Ge NWs show similar percentage reductions in 􏱆l for the same amount of porosity. The model predicts an anisotropic reduction in 􏱆l in SiNWs, with 􏰐111􏰑 showing the maximum reduction followed by 􏰐100􏰑 and 􏰐110􏰑 for a similar hole radius. The reduction in 􏱆l is attributed to phonon localization and anisotropic mode reduction.

Discipline(s)

Electronic Devices and Semiconductor Manufacturing