Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

SungGeun Kim, NCN, Purdue University
Mathieu Luisier, NCN, Purdue University
Abhijeet Paul, NCN, Purdue University
Timothy B. Boykin, University of Alabama, Huntsville
Gerhard Klimeck, NCN, Purdue University

Date of this Version

5-2011

Citation

IEEE Transactions on Electron Devices, Vol. 58, No. 5, May 2011

Abstract

The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transis- tors is numerically investigated using a full 3-D quantum transport simulator based on an atomistic sp3 d5 s∗ tight-binding model. An interface between silicon and silicon dioxide layers is gener- ated in a real-space atomistic representation using an experimen- tally derived autocovariance function. An oxide layer is modeled in a virtual crystal approximation using fictitious SiO2 atoms. ⟨110⟩-oriented NWs with different diameters and randomly gen- erated surface configurations are studied. An experimentally observed ON-current and threshold voltage are quantitatively cap- tured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental data.Atomistic, full-band simulations, interface roughness scattering (IRS), Si gate-all-around (GAA) nanowire (NW) transistors

Discipline(s)

Electromagnetics and photonics

 

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