Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
Date of this Version
5-2011Citation
IEEE Transactions on Electron Devices, Vol. 58, No. 5, May 2011
Abstract
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transis- tors is numerically investigated using a full 3-D quantum transport simulator based on an atomistic sp3 d5 s∗ tight-binding model. An interface between silicon and silicon dioxide layers is gener- ated in a real-space atomistic representation using an experimen- tally derived autocovariance function. An oxide layer is modeled in a virtual crystal approximation using fictitious SiO2 atoms. ⟨110⟩-oriented NWs with different diameters and randomly gen- erated surface configurations are studied. An experimentally observed ON-current and threshold voltage are quantitatively cap- tured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental data.Atomistic, full-band simulations, interface roughness scattering (IRS), Si gate-all-around (GAA) nanowire (NW) transistors
Discipline(s)
Electromagnetics and Photonics
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Comments
SungGeun Kim, Mathieu Luisier, Abhijeet Paul, Timothy B. Boykin, Gerhard Klimeck. Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs. IEEE Transactions on Electron Devices ( Volume: 58, Issue: 5, May 2011 )