Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Joshua Thomas Smith, Purdue University
Christian Sandow, Peter Gruenberg Institut 9 (PGI-9-IT)
Saptarshi Das, Purdue University
Renato A. Minamisawa, Peter Gruenberg Institut 9 (PGI-9-IT)
Siegfried Mantl, Peter Gruenberg Institut 9 (PGI-9-IT)
Joerg Appenzeller, Purdue University

Date of this Version



J. T. Smith, C. Sandow, S. Das, R. A. Minamisawa, S. Mantl, and J. Appenzeller, IEEE Trans. Electron Devices, vol. 58, no. 7, pp. 1822-1829, Jul. 2011


We have experimentally established that the inverse subthreshold slope S of a Si nanowire tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit when the doping profile along the channel is properly engineered. In particular, we have demonstrated that combining excimer laster annealing with a low-temperature rapid thermal anneal results in an abrupt doping profile at the source/channel interface as evidenced by the electrical characteristics. Gate-controlled tunneling has been confirmed by evaluating S as a function of temperature. The good agreement between our experimental data and simulation allows performance predictions for more aggresively scaled TFETs. We find that Si NW-TFETs can be indeed expected to deliver S-values below 60 mV/dec for optimized device structures.


Electronic Devices and Semiconductor Manufacturing | Nanotechnology fabrication