Correlating electrical resistance to growth conditions for multiwalled carbon nanotubes

Chun Lan, Purdue University
Placidus B. Amama, Birck Nanotechnology Center, Purdue University
Timothy Fisher, Birck Nanotechnology Center, Purdue University
R. Reifenberger, Birck Nanotechnology Center, Purdue University

Date of this Version

August 2007

Citation

APPLIED PHYSICS LETTERS 91, 093105 2007

This document has been peer-reviewed.

 

Abstract

A correlation between growth temperature and electrical resistance of multiwalled carbon nanotubes MWNTs has been established by measuring the resistance of individual MWNTs grown by microwave plasma-enhanced chemical vapor deposition PECVD at 800, 900, and 950 °C. The lowest resistances were obtained mainly from MWNTs grown at 900 °C. The MWNT resistance is larger on average at lower 800 °C and higher 950 °C growth temperatures. The resistance of MWNTs correlated well with other MWNT quality indices obtained from Raman spectra. This study identifies a temperature window for growing higher-quality MWNTs with fewer defects and lower resistance by PECVD.

 

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