Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001)
Date of this Version
2-2010Citation
DOI: 10.1063/1.3323092
This document has been peer-reviewed.
Abstract
Atomically resolved scanning tunneling microscope images of carbon ridge defects found in few-layer graphene formed on the C-face (0001) of 4H-silicon carbide reveal a striated exterior surface formed from out-of-plane distortions of the hexagonal graphene lattice. While ridge formation is likely explained by compressive in-plane stresses coupled with the small values of the bending modulus for few-layer graphene, the striated structure along the ridges argues for a localized unidirectional stress in the material directed along the ridge length.
Discipline(s)
Engineering | Nanoscience and Nanotechnology
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