Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization
Date of this Version
3-2010Citation
Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization. Helin Cao, Qingkai Yu, L. A. Jauregui, J. Tian, W. Wu, Z. Liu, R. Jalilian, D. K. Benjamin, Z. Jiang, J. Bao, S. S. Pei, and Yong P. Chen. Appl. Phys. Lett. 96, 122106 (2010); doi: http://dx.doi.org/10.1063/1.3371684
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Abstract
We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio similar to 5 and carrier mobilities up to similar to 3000 cm(2)/V s) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.
Discipline(s)
Engineering | Nanoscience and Nanotechnology
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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 122106 (2010) and may be found at http://dx.doi.org/10.1063/1.3371684. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2010) Helin Cao, Qingkai Yu, L. A. Jauregui, J. Tian, W. Wu, Z. Liu, R. Jalilian, D. K. Benjamin, Z. Jiang, J. Bao, S. S. Pei, and Yong P. Chen. This article is distributed under a Creative Commons Attribution 3.0 Unported License.