Band offsets of Al2O3/InxGa1-xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

N V. Nguyen, Natl Inst Stand & Technol, Div Semicond Elect
M Xu, Purdue University - Main Campus
O A. Kirillov, Natl Inst Stand & Technol, Div Semicond Elect
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
C Wang, Purdue University - Main Campus
K Cheung, Natl Inst Stand & Technol, Div Semicond Elect
J S. Suehle, Natl Inst Stand & Technol, Div Semicond Elect

Date of this Version

2-2010

Citation

DOI: 10.1063/1.3306732

This document has been peer-reviewed.

 

Abstract

Band offsets at the interfaces of InxGa1-xAs/Al2O3/Al where x=0.53 and 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs/Al2O3 interface was found to be insensitive to the indium composition but shifted to a lower energy after a postdeposition annealing at high temperatures. Subthreshold electron photoemission was also observed for the annealed sample and was attributed to interfacial layer formation during the annealing process.

Discipline(s)

Engineering | Nanoscience and Nanotechnology

 

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