0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

Y Q. Wu, Purdue University - Main Campus
W K. Wang, Lehigh University
Ozhan Koybasi, Purdue University - Main Campus
Dmitri Zakharov, Purdue University - Main Campus
E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue University
S Nakahara, Lehigh University
J C. Hwang, Lehigh University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University

Date of this Version

7-2009

Citation

DOI: 10.1109/LED.2009.2022346

This document has been peer-reviewed.

 

Abstract

We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 mu A/mu m and transconductances of 538-705 mu S/mu m. The 100-nm device has a drain current of 801 mu A/mu m and a transconductance of 940 mu S/mu m. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.

Discipline(s)

Engineering | Nanoscience and Nanotechnology

 

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