Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

Laleh Rabieirad, Purdue University - Main Campus
Edgar J. Martinez, Raytheon
Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue University

Date of this Version

6-2009

Citation

DOI: 10.1109/TMTT.2009.2019992

This document has been peer-reviewed.

 

Abstract

A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mu m) dielectric layer that enables very low loss lines (similar to 0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time.

Discipline(s)

Engineering | Nanoscience and Nanotechnology

 

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