Abstract
Recent improvements to existing HPC codes NEMO 3-D and OMEN, combined with access to peta-scale computing resources, have enabled realistic device engineering simulations that were previously infeasible. NEMO 3-D can now simulate 1 billion atom systems, and, using 3D spatial decomposition, scale to 32768 cores. Simulation time for the band structure of an experimental P doped Si quantum computing device fell from 40 minutes to I minute. OMEN can perform fully quantum mechanical transport calculations for real-word UTB FETs on 147,456 cores in roughly 5 minutes. Both of these tools power simulation engines on the nanoHUB, giving the community access to previously unavailable research capabilities.
Keywords
RESONANT-TUNNELING-DIODE; INTERFACE ROUGHNESS SCATTERING; GENERALIZED EIGENVALUE PROBLEM; OPTICAL PHONON-SCATTERING; FIELD-EFFECT TRANSISTORS; NEMO 3-D; ATOMISTIC SIMULATION; SINGLE; NANOWIRES; SYSTEMS
Citation
DOI: 10.1088/1742-6596/180/1/012075
Date of this Version
2009
Recommended Citation
Haley, Benjamin; Lee, Sunhee; Luisier, Mathieu; Ryu, Hoon; Saied, Faisal; Clark, Steven; Bae, Hansang; and Klimeck, Gerhard, "Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB" (2009). Birck and NCN Publications. Paper 528.
https://docs.lib.purdue.edu/nanopub/528