Simulation of Nanowire Tunneling Transistors: From the Wentzel-Kramers-Brillouin Approximation to Full-Band Phonon-Assisted Tunneling

Author

• Mathieu Luisier, Network for Computational Nanotechnology and Birck Nanotechnology Center
• Gerhard Klimeck, Network for Computational Nanotechnology, Purdue UniversityFollow

Abstract

Nanowire band-to-band tunneling field-effect transistors 􏰀TFETs􏰁 are simulated using the Wentzel– Kramers–Brillouin 􏰀WKB􏰁 approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling 􏰀PAT􏰁. It is found that the WKB approximation properly works if one single imaginary path connecting the valence band 􏰀VB􏰁 and the conduction band 􏰀CB􏰁 dominates the tunneling process as in direct band gap semiconductors. However, PAT is essential in Si and Ge nanowire TFETs where multiple, tightly-coupled, imaginary paths exist between the VB and the CB. © 2010 American Institute of Physics. 􏰂doi:10.1063/1.3386521􏰃

Citation

J. Appl. Phys. 107, 084507 (2010)

Date of this Version

4-27-2010

Recommended Citation

Luisier, Mathieu and Klimeck, Gerhard, "Simulation of Nanowire Tunneling Transistors: From the Wentzel-Kramers-Brillouin Approximation to Full-Band Phonon-Assisted Tunneling" (2010). Birck and NCN Publications. Paper 511.
https://docs.lib.purdue.edu/nanopub/511