Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Abhijeet Paul, Network for Computational Nanotechnology, Purdue University
Saumitra Mehrotra, Network for Computational Nanotechnology, Purdue University
Mathieu Luisier, Network for Computational Nanotechnology, Purdue University
Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University

Date of this Version

4-2010

Citation

IEEE Electron Device letters Vol. 31, No. 4, April 2010

Acknowledgements

The authors would like to thank nanoHUB.org for the computational resources and the reviewers for the useful comments.

Abstract

The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated using an atomistic tight-binding model and a virtual crystal approximation to de- scribe the Si and Ge atoms. It is first demonstrated that the band edges and the effective masses of both relaxed and strained SiGe bulk are accurately reproduced by our model. The band structure model is then coupled to a top-of-the-barrier quantum transport approach to simulate the output characteristics of ul- trascaled n/p SiGe NWFETs and explore their viability for future high-performance CMOS applications. We predict a considerable improvement of SiGe nFETs and pFETs over their Si counterparts for SiGe/Si core/shell structures.

Keywords

Ballistic, MOSFETs, nanowire (NW), SiGe, tightbinding (TB), top of the barrier (ToB), virtual crystal approximation (VCA)

 

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