Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Giuseppe C. Tettamanzi, Delft University of Technology
Abhijeet Paul, Network for Computational Nanotechnology, Purdue University
Gabriel P. Lansbergen, Delft University of Technology
Jan Verduijn, Delft University of Technology
Sunheee Lee, Network for Computational Nanotechnology, Purdue University
Nadine Collaert, Interuniversity Microelectronics Center, Belgium
Serge Biesemans, Interuniversity Microelectronics Center, Belgium
Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University
Sven Rogge, Delft University of Technology

Date of this Version

1-27-2010

Citation

IEEE Electron Device Letters Vol. 31, No. 2, February 2010

Acknowledgements

The authors would like to thank P. A. Deosarran and J. Mol for the useful discussions.

This document has been peer-reviewed.

 

Abstract

Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics.

Keywords

FinFET, thermionic emission, tight binding (TB).

Discipline(s)

Nanoscience and Nanotechnology

 

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