Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Author

• Giuseppe C. Tettamanzi, Delft University of Technology
• Abhijeet Paul, Network for Computational Nanotechnology, Purdue University
• Gabriel P. Lansbergen, Delft University of Technology
• Jan Verduijn, Delft University of Technology
• Sunheee Lee, Network for Computational Nanotechnology, Purdue University
• Nadine Collaert, Interuniversity Microelectronics Center, Belgium
• Serge Biesemans, Interuniversity Microelectronics Center, Belgium
• Gerhard Klimeck, Network for Computational Nanotechnology, Purdue UniversityFollow
• Sven Rogge, Delft University of Technology

Abstract

Thermally activated subthreshold transport has been investigated in undoped triple-gate MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the channel as a function of gate voltage has been determined. The results of our experiments and of the tight-binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of the thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of device characteristics.

Keywords

FinFET, thermionic emission, tight binding (TB).

Date of this Version

1-27-2010

Recommended Citation

Tettamanzi, Giuseppe C.; Paul, Abhijeet; Lansbergen, Gabriel P.; Verduijn, Jan; Lee, Sunheee; Collaert, Nadine; Biesemans, Serge; Klimeck, Gerhard; and Rogge, Sven, "Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs" (2010). Birck and NCN Publications. Paper 508.
https://docs.lib.purdue.edu/nanopub/508