Valley Splitting in V-Shaped Quantum Wells

Author

• Timothy B. Boykin, University of Alabama - Huntsville
• Gerhard Klimeck, Network for Computational Nanotechnology, Purdue UniversityFollow
• Paul von Allmen, JPL, Cal Tech
• Seungwon Lee, JPL, Cal Tech
• Fabiano Oyafuso, JPL, Cal Tech

Abstract

The valley splitting 􏰀energy difference between the states of the lowest doublet􏰁 in strained silicon quantum wells with a V-shaped potential is calculated variationally using a two-band tight-binding model. The approximation is valid for a moderately long 􏰀approximately 5.5 – 13.5 nm􏰁 quantum well with a V-shaped potential which can be produced by a realistic delta-doping on the order of nd 􏰈 1012 cm−2. The splitting versus applied field 􏰀steepness of the V-shaped potential􏰁 curves show interesting behavior: a single minimum and for some doublets, a parity reversal as the field is increased. These characteristics are explained through an analysis of the variational wave function and energy functional.

Citation

Journal of Applied Physics 97, 113702 (2005).

Date of this Version

5-23-2005

Recommended Citation

Boykin, Timothy B.; Klimeck, Gerhard; von Allmen, Paul; Lee, Seungwon; and Oyafuso, Fabiano, "Valley Splitting in V-Shaped Quantum Wells" (2005). Birck and NCN Publications. Paper 503.
https://docs.lib.purdue.edu/nanopub/503