Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures
Abstract
Band-to-band tunneling transistors (TFETs) made of InSb, Carbon, and GaSb-InAs broken gap heterostructures are simulated using an atomistic and full-band quantum transport solver. The performances of two-dimensional single-gate and double-gate devices as well as three-dimensional gate-all-around structures are analyzed and compared to find the most promising TFET design. All transistor types are able to provide a region with a steep subthreshold slope, but despite their low band gap, InSb- and C-based (graphene nanoribbons and carbon nanotubes) devices do not offer high enough ON-currents, contrary to GaSb-InAs broken gap structures. However, the nanoribbon and nanotube TFETs can operate at much lower supply voltages than the III-V transistors.
Keywords
Tunneling, Field-Effect, Transistors, InSb, Carbon, GaSb-InAs
Date of this Version
2009
Recommended Citation
Luisier, Mathieu and Klimeck, Gerhard, "Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures" (2009). Birck and NCN Publications. Paper 502.
https://docs.lib.purdue.edu/nanopub/502