Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures

Mathieu Luisier, Purdue University - Main Campus
Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University

Date of this Version

2009

Citation

ISBN: 978-1-4244-5639-0

This document has been peer-reviewed.

 

Abstract

Band-to-band tunneling transistors (TFETs) made of InSb, Carbon, and GaSb-InAs broken gap heterostructures are simulated using an atomistic and full-band quantum transport solver. The performances of two-dimensional single-gate and double-gate devices as well as three-dimensional gate-all-around structures are analyzed and compared to find the most promising TFET design. All transistor types are able to provide a region with a steep subthreshold slope, but despite their low band gap, InSb- and C-based (graphene nanoribbons and carbon nanotubes) devices do not offer high enough ON-currents, contrary to GaSb-InAs broken gap structures. However, the nanoribbon and nanotube TFETs can operate at much lower supply voltages than the III-V transistors.

Discipline(s)

Engineering | Nanoscience and Nanotechnology

 

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