Pseudomorphic stabilization of rocksalt GaN in TiN/GaN multilayers and superlattices
Date of this Version7-2009
This document has been peer-reviewed.
Gallium nitride (GaN) in its stable wurtzite phase has proven its utility in light-emitting diodes and diode lasers as well as high-temperature and high-power electronic devices. In addition to its equilibrium wurtzite phase, GaN exhibits two cubic polymorphs, a zinc-blende phase and a high-pressure rocksalt phase. Here, we report the pseudomorphic stabilization of the high-pressure rocksalt phase of GaN within TiN/GaN multilayers as verified using x-ray diffraction and high-resolution transmission electron microscopy. High-resolution lattice imaging confirmed that the lattice parameter of the rocksalt GaN phase is 0.41 nm. The critical thickness of the GaN film that can be pseudomophically stabilized in rocksalt phase within TiN/GaN superlattices is determined to be less than 2 nm.
Nanoscience and Nanotechnology