Pseudomorphic stabilization of rocksalt GaN in TiN/GaN multilayers and superlattices

Vijay Rawat, Purdue University - Main Campus
Dmitri Zakharov, Purdue University - Main Campus
E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue University
Timothy D. Sands, Purdue University

Date of this Version



DOI: 10.1103/PhysRevB.80.024114

This document has been peer-reviewed.



Gallium nitride (GaN) in its stable wurtzite phase has proven its utility in light-emitting diodes and diode lasers as well as high-temperature and high-power electronic devices. In addition to its equilibrium wurtzite phase, GaN exhibits two cubic polymorphs, a zinc-blende phase and a high-pressure rocksalt phase. Here, we report the pseudomorphic stabilization of the high-pressure rocksalt phase of GaN within TiN/GaN multilayers as verified using x-ray diffraction and high-resolution transmission electron microscopy. High-resolution lattice imaging confirmed that the lattice parameter of the rocksalt GaN phase is 0.41 nm. The critical thickness of the GaN film that can be pseudomophically stabilized in rocksalt phase within TiN/GaN superlattices is determined to be less than 2 nm.


Nanoscience and Nanotechnology