Computational Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sesnsors for DNA Detection
Abstract
In recent years DNA-sensors, and generally biosensors, with semiconducting transducers were fabricated and characterized. Although the concept of so-called BioFETs was proposed already two decades ago, its realization has become feasible only recently due to advances in process technology. In this paper a comprehensive and rigorous approach to the simulation of silicon-nanowire DNAFETs at the feature-scale is presented. It allows to investigate the feasibility of single-molecule detectors and is used to elucidate the performance that can be expected from sensors with nanowire diameters in the deca-nanometer range. Finally the computational challenges for the simulation of silicon-nanowire DNAsensors are discussed.
Keywords
DNAFET, BioFET, Simulation, Silicon-nanowire
Date of this Version
1-18-2007
Recommended Citation
Heitzinger, Clemens and Klimeck, Gerhard, "Computational Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sesnsors for DNA Detection" (2007). Birck and NCN Publications. Paper 440.
https://docs.lib.purdue.edu/nanopub/440