Abstract
The rapid progress in nanofabrication technologies has led to the development of novel devices and structures which could revolutionize many high technology industries. These devices demonstrate new capabilities and functionalities where the quantum nature of charge carriers plays an important role in determining the overall device properties and performance. For device sizes in the range of tens of nanometers, the atomistic granularity of constituent materials cannot be neglected: effects of atomistic strain, surface roughness, unintentional doping, the underlying crystal symmetries, or distortions of the crystal lattice can have a dramatic impact on the device operation and performance.
Keywords
Nanostructures, Quantum dots, Strain, Band structure, Piezoelectricity, Tight binding, NEMO 3-D, nanoHUB, Rappture
Date of this Version
6-15-2009
Recommended Citation
Ahmed, Shaikh; Kharche, Neerav; Rahman, Rajib; Usman, Muhammad; Lee, Sunhee; Ryu, Hoon; Bae, Hansang; Clark, Steve; Haley, Benjamin; Naumov, Maxim; Saied, Faisal; Korkusinski, Marek; Kennel, Rick; McLennan, Michael; Boykin, Timothy B.; and Klimeck, Gerhard, "Multimillion Atom Simulations with NEMO 3-D" (2009). Birck and NCN Publications. Paper 435.
https://docs.lib.purdue.edu/nanopub/435