Abstract
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.
Citation
accepted fr publication in Physical Review B 2009
Date of this Version
5-19-2009
Recommended Citation
Rahman, Rajib; Park, Seung H.; Boykin, Timothy B.; Klimeck, Gerhard; Rogge, Sven; and Hollenberg, Lloyd C. L., "Gate Induced g-factor Control and Dimensional Transition for Donors in Multi-Valley Semiconductors" (2009). Birck and NCN Publications. Paper 427.
https://docs.lib.purdue.edu/nanopub/427