On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

Abhijeet Paul, Purdue University - Main Campus
Saumitra Mehrotra, Purdue University - Main Campus
Gerhard Klimeck, Purdue University - Main Campus
Mathieu Luisier, Purdue University - Main Campus

Date of this Version

5-27-2009

Citation

IEEE Proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29, 2009

Abstract

This work focuses on the determination of the valid device domain for the use of the Top of the barrier (ToB) model to simulate quantum transport in nanowire MOSFETs in the ballistic regime. The presence of a proper Source/Drain barrier in the device is an important criterion for the applicability of the model. Long channel devices can be accurately modeled under low and high drain bias with DIBL adjustment.

 

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