On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

Author

• Abhijeet Paul, Purdue University - Main Campus
• Saumitra Mehrotra, Purdue University - Main Campus
• Gerhard Klimeck, Purdue University - Main CampusFollow
• Mathieu Luisier, Purdue University - Main Campus

Abstract

This work focuses on the determination of the valid device domain for the use of the Top of the barrier (ToB) model to simulate quantum transport in nanowire MOSFETs in the ballistic regime. The presence of a proper Source/Drain barrier in the device is an important criterion for the applicability of the model. Long channel devices can be accurately modeled under low and high drain bias with DIBL adjustment.

Keywords

component; nanowires; top of the barrier; MOSFET; ballistic transport model; DIBL; tunneling current; top-of-the-barrier; subthreshold-slope; Tight-Binding; Short channel effects

Date of this Version

5-27-2009

Recommended Citation

Paul, Abhijeet; Mehrotra, Saumitra; Klimeck, Gerhard; and Luisier, Mathieu, "On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs" (2009). Birck and NCN Publications. Paper 426.
https://docs.lib.purdue.edu/nanopub/426