A Study of Temperature-Dependent Properties of N-type Delta-Doped Si Band-Structures in Equilibrium
Abstract
A highly phosphorus δ-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperaturedependent electronic properties are studied. To account for high doping density with many electrons, a highly parallelized selfconsistent Schrödinger-Poisson solver is used with atomistic representations of multiple impurity ions. The band-structure in equilibrium and the corresponding Fermi-level position are computed for a selective set of temperatures. The result at room temperature is compared with previous studies and the temperature-dependent electronic properties are discussed further in detail with the calculated 3-D self-consistent potential profile.
Keywords
delta-doped Si; Schrödinger-Poisson; Self-consistent simulation; Tight-binding
Date of this Version
5-27-2009
Recommended Citation
Ryu, Hoon; Lee, Sunhee; and Klimeck, Gerhard, "A Study of Temperature-Dependent Properties of N-type Delta-Doped Si Band-Structures in Equilibrium" (2009). Birck and NCN Publications. Paper 424.
https://docs.lib.purdue.edu/nanopub/424