Localized heating on silicon field effect transistors: Device fabrication and temperature measurements in fluid

Oguz H. Elibol, Purdue University - Main Campus
Bobby Reddy, Jr., University of Illinois at Urbana-Champaign
Pradeep R. Nair, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University
Brian Dorvel, University of Illinois at Urbana-Champaign
Felice Butler, Purdue University - Main Campus
Zahab S. Ahsan, Purdue University - Main Campus
Donald E. Bergstrom, Birck Nanotechnology Center and Bindley Bioscience Center, Purdue University
Muhammad A. Alam, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University
Rashid Bashir, University of Illinois at Urbana-Champaign

Date of this Version

2009

Citation

DOI: 10.1039/b906048k

This document has been peer-reviewed.

 

Abstract

We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.

Discipline(s)

Nanoscience and Nanotechnology

 

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