Abstract
Using a three-dimensional, atomistic quantum transport simulator based on the tight-binding method, we investigate statistical samples of single-gate graphene nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different line edge roughness probabilities. We find that as the nanoribbon edges become rougher, the device OFF-current drastically increases due to a reduction of the graphene band gap and an enhancement of source-to-drain tunneling leakage through the gate potential barrier. At the same time, the ON-current remains almost constant. This leads to a deterioration of the transistor subthreshold slopes and to unacceptably low ON/OFF current ratios limiting the switching performances of GNR TFETs.
Keywords
energy gap; field effect transistors; fullerene devices; graphene; nanoelectronics; probability; tight-binding calculations; tunnelling
Citation
APPLIED PHYSICS LETTERS 94, 223505 (2009)
Date of this Version
6-1-2009
Recommended Citation
Luisier, Mathieu and Klimeck, Gerhard, "Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness" (2009). Birck and NCN Publications. Paper 392.
https://docs.lib.purdue.edu/nanopub/392