Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

M L. Bolen, Birck Nanotechnology Center, Purdue University
Michael A. Capano, Birck Nanotechnology Center, Purdue University

Date of this Version

4-2009

Citation

Journal of ELECTRONIC MATERIALS, Vol. 38, No. 4, 2009

This document has been peer-reviewed.

 

Abstract

Over 350 4H-SiC Schottky barrier diodes (SBDs) of varying size are characterized using current-voltage (I-V) measurements, with some also measured as a function of temperature. Devices display either a characteristic single-barrier height or atypical dual-barrier heights. Device yields are shown to decrease as device area increases. Molten KOH etching is used to highlight defects for analysis by optical microscopy and atomic force microscopy. The I-V characteristics are compared against the defect density. A positive correlation between effective barrier height and effective electrically active area of the SBDs is found. No correlation is found between threading dislocations and ideality factor or barrier height.

Discipline(s)

Nanoscience and Nanotechnology

 

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