Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies

Laura B. Biedermann, Birck Nanotechnology Center, Purdue University
Michael L. Bolen, Birck Nanotechnology Center, Purdue University
Michael A. Capano, Birck Nanotechnology Center, Purdue University
Dmitry Zemlyanov, Birck Nanotechnology Center, Purdue University
R. Reifenberger, Birck Nanotechnology Center, Purdue University

Abstract

Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures (1450-1600 degrees C) in vacuum. A continuous graphene surface layer was formed at temperatures above 1475 degrees C. X-ray photo-electron spectroscopy (XPS) and scanning tunneling microscopy (STM) were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moire superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic-scale resolution, considerable insight into the growth mechanisms of FLG on the carbon face of SiC is obtained.

Discipline(s)

Nanoscience and Nanotechnology