Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition

Vijay Rawat, Birck Nanotechnology Center, School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University
Timothy D. Sands, Birck Nanotechnology Center, School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University

Date of this Version

September 2006

Citation

Journal of Applied Physics 100, 064901 (2006)

This document has been peer-reviewed.

 

Comments

DOI: 10.1063/1.2337784

Abstract

TiN / GaN metal/semiconductor multilayers were grown by reactive pulsed laser deposition in an ammonia ambient on sapphire and MgO substrates for potential application in solid-state thermionic direct energy conversion devices. Crystallographic analysis of the multilayers by high-resolution x-ray diffraction and cross-sectional transmission electron microscopy revealed that, despite the difference in the crystal structures of rocksalt TiN and wurtzite GaN, it is possible to grow thick

 

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