High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
G. Lu, Department of Chemistry and the Materials Research Center, Northwestern University
A. Facchetti, Department of Chemistry and the Materials Research Center, Northwestern University
T. J. Marks, Department of Chemistry and the Materials Research Center, Northwestern University
Date of this Version
October 2006 Citation
Applied Physics Letters 89, 142101 (2006)
This document has been peer-reviewed.
Abstract
High-performance GaAs metal-insulator-semiconductor field-effect-transistors
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DOI: 10.1063/1.2358202