Dielectrophoresis and Chemically Mediated Directed Self-Assembly of Micrometer-Scale Three-Terminal Metal Oxide Semiconductor Field-Effect Transistors
Date of this VersionSeptember 2005
This document has been peer-reviewed.
Directed self-assembly techniques, such as fluidic self-assembly,[ 1–3] liquid-solder-based self-assembly,[4,5] self-assembly using capillary forces in fluid,[6,7] and shape-and-solder-directed self-assembly,[8,9] has been studied by many researchers in recent years in order to implement micro- and nanoscale electronic devices and to integrate heterogeneous materials and devices. These self-assembled systems can be used to construct hybrid devices with good electronic properties by using high-quality material to fabricate the initial device and then assembling these devices on other substrates. However, many challenges still remain. All studies to date have been demonstrated using devices or blocks containing devices that are 50 lm or larger. As the size of the devices is reduced, the efficiency and position precision is also reduced. We demonstrate here, for the first time, dielectrophoresis (DEP) and chemically mediated fluidic self-assembly of individual three-terminal silicon metal oxide semiconductor field-effect transistors (MOSFETs) on a patterned substrate. Moreover, current– voltage (I–V) characteristics of the assembled MOSFETs were measured after the solution was evaporated and the contacts were annealed.