Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model

W D. Hu, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
X S. Chen, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,
Z J. Quan, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,
X M. Zhang, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Y Huang, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,
C S. Xia, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
W Lu, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University

Date of this Version

August 2007

Citation

J. Appl. Phys. 102, 034502 (2007); DOI:10.1063/1.2764206

This document has been peer-reviewed.

 

Abstract

Undoped GaN-based metal-oxide-semiconductor high-electron-mobility-transistors (MOS-HEMTs) with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 µm up to 40 µm. With a two-dimensional numerical simulator, we report simulation results of the GaN-based MOS-HEMTs using field-dependent drift velocity model. A developed model, taking into account polarization-induced charges and defect-induced traps at all of the interfaces and process-related trap levels of bulk traps measured from experiments, is built. The simulated output characteristics are in good agreement with reported experimental data. The effect of the high field at the drain-side gate edge and bulk trap density of GaN on the output performance is discussed in detail for the device optimization. AlGaN/GaN/AlN quantum-well (QW) MOS-HEMTs have been proposed and demonstrated based on numerical simulations. The simulation results also link the current collapse with electrons spreading into the bulk, and confirm that a better electron localization can dramatically reduce the current collapse for the QW-MOS-HEMTs. Due to the large band edge discontinuity and effective quantum confinement of the AlGaN/GaN/AlN quantum well, the parasitic conduction in the bulk is completely eliminated.

 

Share