A 1-kV 4H-SiC power DMOSFET optimized for low ON-resistance

Asmita Saha, Purdue University
James A. Cooper, Birck Nanotechnology Center, Purdue University

Date of this Version

October 2007

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 10, OCTOBER 2007

This document has been peer-reviewed.

 

Abstract

In this paper we describe a low-voltage (similar to 1 kV) short-channel 4H-SiC power DMOSFET with several structural modifications to reduce the specific ON-resistance. These include the following: 1) a heavily doped n-type current-spreading layer beneath the p-base; 2) a heavily-doped JFET region with narrow (similar to 1 mu m) JFET width; 3) a "segmented" base contact layout; and 4) tighter alignment tolerances to reduce cell pitch. The design is optimized using computer simulations, and the resulting devices are fabricated and characterized. The fabricated device exhibits a specific ON-resistance of 6.95 m Omega center dot cm(2), which is one of the lowest yet reported ON-resistances for a power MOSFET in this voltage range.

 

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