Electrical properties of ZnO nanowire field effect transistors by surface passivation

Woong-Ki Hong, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
Bong Joong Kim, Purdue University
Tae-Wook Kim, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
Gunho Jo, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
Sunghoon Song, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
Soon-Shin Kwon, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
Ahnsook Yoon, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue University
Takhee Lee, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

Date of this Version

February 2008

Citation

Colloids and Surfaces A: Physicochem. Eng. Aspects 313–314 (2008) 378–382

This document has been peer-reviewed.

 

Abstract

We have synthesized single crystalline ZnO nanowires by thermal evaporation method and fabricated individual ZnO nanowire field effect transistors (FETs) to investigate their electrical properties. ZnO nanowires are strongly affected by O-2 molecules in ambient. For example, surface defects such as oxygen vacancies act as adsorption sites of O-2 molecules, and the chemisorption of O-2 molecules depletes the surface electron states and reduces the channel conductivity. Therefore, it is important to protect the electrical properties of ZnO nanowires by surface passivation. For this purpose, we investigated the changes of the electrical properties of ZnO nanowire FETs with and without passivation by an organic material, poly(methyl metahacrylate) (PMMA). The ZnO nanowire FETs with PMMA passivation exhibited better performance in comparison with unpassivated devices.

 

Share