Performance of carbon nanotube-dispersed thin-film transistors

Satish Kumar, Network for Computational Nanotechnology and Purdue University
G. B. Blanchet, Dupont Central Research, Wilmington, DE
M. S. Hybertsen, Center for Electron Transport in Molecular Nanostructures, Columbia University
Jayathi Y. Murthy, Network for Computational Nanotechnology, School of Mechanical Engineering, Purdue University
Muhammad A. Alam, Network for Computational Nanotechnoloy, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University

Date of this Version

October 2006


DOI: 10.1063/1.2357852


A numerical technique that relies on modifying the organic semiconducting host with metallic carbon nanotubes CNTs to increase the transconductance or, equivalently, reduce effective channel length Leff has recently been proposed. The authors use an extensive set of experimental data to analyze the performance of these transistors using the theory of heterogeneous two-dimensional percolating networks of metal-semiconducting CNTs embedded in the organic host. Their analysis i reproduces experimental characteristics, ii shows that Leff scales as a power law of CNT-doping density , iii illustrates the importance of an active subpercolating network of semiconducting CNTs in an organic host, and iv establishes the upper limit of transistor count for an integrated circuit based on this technology as a function of , on current Ion , and circuit-failure probability F .