High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm

Yi Xuan
Y Q. Wu, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University

Date of this Version

April 2008

Citation

IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 4, APRIL 2008

This document has been peer-reviewed.

 

Abstract

High-performance inversion-type enhancementmode (E-mode) n-channel In0.65Ga0.35As MOSFETs with atomic-layer-deposited Al2O3 as gate dielectric are demonstrated. A 0.4-mu m gate-length MOSFET with an Al2O3 gate oxide thickness of 10 mn shows a gate leakage current that is less than 5 x 10(-6) A/cm(2) at 4.0-V gate bias, a threshold voltage of 0.4 V, a maximum drain current of 1.05 A/mm, and a transconductance of 350 mS/mm at drain voltage of 2.0 V. The maximum drain current and transconductance scale linearly from 40 mu m to 0.7 mu m. The peak effective mobility is similar to 1550 cm(2)/V center dot s at 0.3 MV/cm and decreases to similar to 650 cm(2)/V center dot s at 0.9 MV/cm. The obtained maximum drain current and transconductance are all record-high values in 40 years of E-mode III-V MOSFET research.

 

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