Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes

Sunkook Kim, Purdue University - Main Campus
Sanghyun Ju, Kyonggi University
J H. Back, Department of Materials Science and Engineering, University of Illinois
Yi Xuan, Purdue University
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Moonsub Shim, Department of Materials Science and Engineering, University of Illinois
David B. Janes, Purdue University
Saeed Mohammadi, School of Electrical and Computer Engineering, Purdue University

Date of this Version

August 2008

Citation

Adv. Mater. 2008, 20, 1–5

This document has been peer-reviewed.

 

Abstract

The development of mechanically flexible and/or optically transparent electronics could enable next-generation electronics technologies, which would be easy-to-read, light-weight, unbreakable, transparent, and flexible. Potential applications could include transparent monitors, heads-up displays, and conformable products. Recent reports have demonstrated transparent thin film transistors (TFTs) using channels consisting of semiconductor nanowires (ZnO, SnO2, or In2O3) and random networks of single-walled carbon nanotubes (SWNTs).[1,2] Transparent TFTs are attractive for the drive circuitry in transparent and/or flexible active matrix display devices. These devices could overcome the limitations of conventional polycrystalline silicon and amorphous silicon thin film transistors, such as low mobility, nontransparency, or high temperature processing.[3–5]

 

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