GaMnAs-based hybrid multiferroic memory device

Mason Overby, Purdue University
Alexander Chernyshov, Purdue University
Leonid P. Rokhinson, Birck Nanotechnology Center, Purdue University
X Liu, Department of Physics, University of Notre Dame
J K. Furdyna, Department of Physics, University of Notre Dame

Abstract

We report a nonvolatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.