High performance In2O3 nanowire transistors using organic gate nanodielectrics
Date of this VersionJune 2008
APPLIED PHYSICS LETTERS 92, 222105
This document has been peer-reviewed.
We report the fabrication of high performance nanowire transistors (NWTs) using In2O3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In2O3 NWTs are controlled by individually addressed gate electrodes. These devices exhibit n-type transistor characteristics with an on-current of similar to 25 mu A for a single In2O3 nanowire at 2.0V(ds), 2.1V(gs), a subthreshold slope of 0.2 V/decade, an on-off current ratio of 10(6), and a field-effect mobility of similar to 1450 cm(2)/V s. These results demonstrate that SAND-based In2O3 NWTs are promising candidates for high performance nanoscale logic technologies.