Magneto-transport in MoS2: Phase Coherence, Spin-Orbit Scattering, and the Hall Factor

Adam T. Neal, Birck Nanotechnology Center, Purdue University
Han Liu, Birck Nanotechnology Center, Purdue University
Jiangjiang Gu, Birck Nanotechnology Center, Purdue University
Peide D. Ye, Birck Nanotechnology Center, Purdue University

Date of this Version

8-2013

Abstract

We have characterized phase coherence length, spin-orbit scattering length, and the Hall factor in n-type MoS2 2D crystals Via Weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of similar to 50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T-1/2 with increased temperatures. Weak localization measurements also allow us, for the first time without optical techniques, to estimate the spin-orbit scattering length to be 430 nm, pointing to the potential of MoS2 for spintronics applications. Via Hall-effect measurements, we observe a low-temperature Hall mobility of 311 cm(2)/(V s) at T = 1 K, which decreases as a power law with a characteristic exponent gamma = 1.5 from 10 to 60 K. At room temperature, we observe Hall mobility of 24 cm(2)/(V s). By determining the Hall factor for MoS2 to be 1.35 at T = 1 K and 2.4 at room temperature, we observe drift mobility of 420 and 56 cm(2)/(V s) at T = 1 K and room temperature, respectively.

Discipline(s)

Nanoscience and Nanotechnology

 

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