Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates

Mark H. Oliver, Purdue University
Jeremy L. Schroeder, Birck Nanotechnology Center, Purdue University
David Ewoldt, Birck Nanotechnology Center, Purdue University
Isaac Wildeson, Purdue Univ, Sch Elect & Comp Engn
vijay rawat, Purdue University
Robert Colby, Purdue University
Patrick R. Cantwell, Purdue University
E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue University
Timothy D. Sands, Purdue University

Date of this Version

July 2008



This document has been peer-reviewed.



An intermediate ZrN/AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of similar to 1000 degrees C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1 mu m thick grown on ZrN/AlN/Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230 arc sec.