Noninvasive Spatial Metrology of Single-Atom Devices

Author

• Fahd A. Mohiyaddin, University of New South Wales
• Rajib Rahman, Sandia National Laboratory
• Rachpon Kalra, University of New South Wales
• Gerhard Klimeck, Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue UniversityFollow
• Lloyd C. L. Hollenberg, University of Melbourne
• Jarryd J. Pla, University of New South Wales
• Andrew S. Dzurak, University of New South Wales
• Andrea Morello, University of New South Wales

Abstract

The exact location of a single dopant atom in a nanostructure can influence or fully determine the functionality of highly scaled transistors or spin-based devices. We demonstrate here a noninvasive spatial metrology technique, based on the microscopic modeling of three electrical measurements on a single-atom (phosphorus in silicon) spin qubit device: hyperfine coupling, ground state energy, and capacitive coupling to nearby gates. This technique allows us to locate the qubit atom with a precision of +/- 2.5 nm in two directions and +/- 15 nm in the third direction, which represents a 1500-fold improvement with respect to the prefabrication statistics obtainable from the ion implantation parameters.

Keywords

P-31 donors in Si; quantum computing; ion implantation; donor location uncertainty; nanoelectronic modeling; triangulation; ELECTRON-SPIN; ATOMISTIC SIMULATION; NEMO 3-D; SILICON; TRANSISTOR; RESONANCE; READOUT; DONORS; QUBIT

Date of this Version

5-2013

Recommended Citation

Mohiyaddin, Fahd A.; Rahman, Rajib; Kalra, Rachpon; Klimeck, Gerhard; Hollenberg, Lloyd C. L.; Pla, Jarryd J.; Dzurak, Andrew S.; and Morello, Andrea, "Noninvasive Spatial Metrology of Single-Atom Devices" (2013). Birck and NCN Publications. Paper 1401.
https://docs.lib.purdue.edu/nanopub/1401