Silicon optical diode with 40 dB nonreciprocal transmission

Li Fan, Birck Nanotechnology Center, Purdue University
Leo T. Varghese, Birck Nanotechnology Center, Purdue University
Jian Wang, Birck Nanotechnology Center, Purdue University
Yi Xuan, Birck Nanotechnology Center, Purdue University
Andrew M. Weiner, Birck Nanotechnology Center, Purdue University
Minghao Qi, Birck Nanotechnology Center, Purdue University

Abstract

A passive all-silicon optical diode is demonstrated to realize a record high nonreciprocal transmission ratio (NTR) of 40 dB. Individual microrings that make up the device are experimentally studied to explain the nonlinear power dynamics. There is a compromise between the NTR and insertion loss, and possible solutions for further improvements are discussed. This work provides a way to realize extremely high optical nonreciprocity on chip for optical information processing applications. (C) 2013 Optical Society of America

Discipline(s)

Nanoscience and Nanotechnology