Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs
Date of this VersionAugust 2008
IEEE transactions on electron devices [0018-9383] Tamaki yr:2008 vol:55 iss:8 pg:1928 -1933
This document has been peer-reviewed.
The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunchthrough buffer layer is found to be the major factor determining switching