Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs

TOMOHIRO TAMAKI, PURDUE UNIVERSITY
Ginger G. Walden, Birck Nanotechnology Center, Purdue University
Yang Sui, Purdue University
James A. Cooper, Birck Nanotechnology Center, Purdue University

Date of this Version

August 2008

Citation

IEEE transactions on electron devices [0018-9383] Tamaki yr:2008 vol:55 iss:8 pg:1928 -1933

This document has been peer-reviewed.

 

Comments

Article available at: http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4578887

Abstract

The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunchthrough buffer layer is found to be the major factor determining switching

 

Share