Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs
Date of this Version
8-1-2008This document has been peer-reviewed.
Abstract
The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunchthrough buffer layer is found to be the major factor determining switching
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Article available at: http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4578887