Demonstration and characterization of bipolar monolithic integrated circuits in 4H-SiC

Jeong-Youb Lee
Shakti Singh, Purdue Univ, Sch Elect & Comp Engn, Birck Nanotechnol Ctr
James A. Cooper, Birck Nanotechnology Center, Purdue University

Date of this Version

August 2008

Citation

IEEE Transactions on Volume 55, Issue 8, Aug. 2008 Page(s):1946 - 1953

This document has been peer-reviewed.

 

Comments

Article available at: http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4578859

Abstract

A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300 degrees C, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.

 

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