Demonstration and characterization of bipolar monolithic integrated circuits in 4H-SiC
Date of this VersionAugust 2008
IEEE Transactions on Volume 55, Issue 8, Aug. 2008 Page(s):1946 - 1953
This document has been peer-reviewed.
A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300 degrees C, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.