Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Helin Cao, Birck Nanotechnology Center, Purdue University
Suyang Xu, Princeton University
Ireneusz Miotkowski, Birck Nanotechnology Center, Purdue University
Jifa Tian, Birck Nanotechnology Center, Purdue University
Deepak Pandey, Birck Nanotechnology Center, Purdue University
M. Zahid Hasan, Princeton University
Yong P. Chen, Birck Nanotechnology Center, Purdue University

Abstract

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly revealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Discipline(s)

Nanoscience and Nanotechnology