Wideband Diode-based Reconfigurable Matching Network Operating at 36 dBm Input Power

Wesley N. Allen, Birck Nanotechnology Center, Purdue University
Dimitrios Peroulis, Birck Nanotechnology Center, Purdue University

Abstract

This paper presents wideband reconfigurable matching networks operating at high power in the GSM850 and GSM900 bands to counteract the detuning of mobile handset antennas caused by user interaction. High breakdown voltage varactor diodes are used as tuning elements. Single-diode, shunt-series diode, and two-diode topologies are investigated for power handling, and the effect of input power on matching network transducer gain, G T, is studied. Results show that a shunt-series diode topology can handle input powers of up to 3 6 dBm while maintaining G T degradation of less than 0.1 dB.

Discipline(s)

Nanoscience and Nanotechnology